Silicon Carbide power devices benefit from the advantages of wide bandgap materials and have the characteristics of high power, high efficiency, and high temperature resistance. They are widely used in various fields of new energy, including photovoltaics, energy storage, charging piles, electric vehicles etc. Compared with silicon power devices, the price of its silicon carbide equivalent is still relatively high, and the reliability also needs to be improved. The cost and yield of SIC MOSFET wafer play an important role for that. Improving the test coverage and efficiency of SIC MOSFET wafer is important and quite challenging due to the characteristics of high voltage and low leakage, to name a few. This paper will introduce the characteristics of SIC MOSFET devices, the challenges of multi-site wafer testing and demonstrate the ETS88Duo DP32 test solutions & result for SIC MOSFET.